Magnetic treatment of semiconductor silicon

The current publication reports on the magnetic field influence on the microstructure of Cz-Si doped with Al, Mg, Cu, Fe, Zr, Hf. The point is that these dopants have different effects on the interaction energy of silicon atoms in its crystal lattice and differently behave under magnetic field treatment. In this context, the problem of silicon processing is first time addressed.

It is established that the dopants (Al, Mg, Cu, Fe), which decrease the energy of atom interaction within the crystal lattice of silicon, lead to the increase in the defects of the silicon structural units after 240 hours of magnetic field treatment while 720 hours produce the decrease in the quantity of such defects.

Cz-Si doped with Zr, Hf (these dopants increase the interaction energy of the silicon crystal lattice) experiences the decrease in the quantity of defects in the structural units starting from 240 of exposing to the magnetic field.

By means of X-ray diffraction technique, the occurrence of new peaks on the scattering angles of 90–92 degrees has been detected, that is due to Si_FCC lattice distortion and the formation of Si orthorhomic alongside with it_. This indicates phase transformations in the samples of semiconductor silicon during magnetic treatment at room temperature.